Semiconductor light emitting device

ABSTRACT

Semiconductor light emitting device includes: substrate including main and back surfaces, first and second side surfaces, and bottom and top surfaces, wherein main surface includes first to fourth sides; first main surface electrode on main surface and including first base portion contacting the sides of the main surface, and die pad connected to first base portion; second main surface electrode disposed on the main surface and including second base portion contacting first and third sides of the main surface, and wire pad connected to second base portion; semiconductor light emitting element including first electrode pad and mounted on die pad; wire connecting first electrode pad and wire pad; first insulating film covering portion between first base portion and die pad; second insulating film covering portion between second base portion and wire pad and having end portions contacting main surface; and light-transmitting sealing resin.

CROSS-REFERENCE TO RELATED APPLICATION

This application is based upon and claims the benefit of priority fromJapanese Patent Application No. 2019-060989, filed on Mar. 27, 2019, theentire contents of which are incorporated herein by reference.

TECHNICAL FIELD

The present disclosure relates to a semiconductor light emitting device.

BACKGROUND

An LED module on which an LED chip that emits desired light is mountedis known in the related art. The LED module known in the related art isa so-called side view type LED module that emits light in parallel witha circuit board on which the LED module is mounted. Such an LED moduleincludes an LED chip mounted on a die pad of a substrate, a wire thatconnects the LED chip and a pad of the substrate, and a sealing resinthat seals the LED chip and the wire. The die pad and the pad arerespectively connected to electrodes for mounting the LED module on thecircuit board.

Due to the recent demand for further downsizing of electronicapparatuses, further downsizing of LED packages is required. However, ifan electrode of a substrate and a sealing resin for sealing an LED chipare close to each other due to downsizing, a solder for mounting an LEDmodule on a circuit board may penetrate into the inside from between theelectrode and the sealing resin. Such solder penetration causes problemssuch as peeling of the LED chip and a wire from a pad.

SUMMARY

Some embodiments of the present disclosure provide a semiconductor lightemitting device capable of suppressing an occurrence of defects due topenetration of solder.

According to one embodiment of the present disclosure, there is provideda semiconductor light emitting device. The semiconductor light emittingdevice includes: a substrate including a main surface and a back surfacefacing opposite sides in a thickness direction of the substrate, a firstside surface and a second side surface facing opposite sides in a firstdirection perpendicular to the thickness direction, and a bottom surfaceand a top surface facing opposite sides in a second directionperpendicular to the thickness direction and the first direction,wherein the main surface includes a first side on the side of the bottomsurface, a second side on the side of the first side surface, a thirdside on the side of the second side surface, and a fourth side on theside of the top surface; a first main surface electrode that is disposedon the main surface and includes a first base portion in contact withboth the first side and the second side of the main surface, and a diepad connected to the first base portion; a second main surface electrodethat is disposed on the main surface and includes a second base portionin contact with both the first side and the third side of the mainsurface, and a wire pad connected to the second base portion; asemiconductor light emitting element that includes a first electrode padand is mounted on the die pad; a wire connecting the first electrode padand the wire pad; a first insulating film that covers a portion betweenthe first base portion and the die pad and has both end portions incontact with the main surface; a second insulating film that covers aportion between the second base portion and the wire pad and has bothend portions in contact with the main surface; and a light-transmittingsealing resin covering the main surface, the first main surfaceelectrode, the second main surface electrode, the semiconductor lightemitting element, the wire, the first insulating film, and the secondinsulating film.

With this configuration, solder attached to the first through electrodeconnected to the first base portion is unlikely to penetrate between thefirst base portion and the first insulating film. Therefore, since thepenetration of solder into the semiconductor light emitting device frombetween the first main surface electrode and the first insulating filmis suppressed, it is possible to suppress an occurrence of a defect thatthe semiconductor light emitting element is separated from the die pad.Similarly to the first insulating film, since the penetration of solderinto the semiconductor light emitting device from between the secondmain surface electrode and the second insulating film is suppressed, itis possible to suppress the occurrence of a defect that the wire isseparated from the wire pad.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a perspective view of a semiconductor light emitting device,when viewed from a front upper right side, according to a firstembodiment of the present disclosure.

FIG. 2 is a perspective view of the semiconductor light emitting device,when viewed from a rear upper left side, according to the firstembodiment.

FIG. 3 is a front view of the semiconductor light emitting deviceaccording to the first embodiment.

FIG. 4 is a rear view of the semiconductor light emitting deviceaccording to the first embodiment.

FIG. 5 is a top view of the semiconductor light emitting deviceaccording to the first embodiment.

FIG. 6 is a bottom view of the semiconductor light emitting deviceaccording to the first embodiment.

FIG. 7 is a right side view of the semiconductor light emitting deviceaccording to the first embodiment.

FIG. 8 is a left side view of the semiconductor light emitting deviceaccording to the first embodiment.

FIG. 9 is a cross-sectional view taken along a line 9-9 in FIG. 1.

FIG. 10 is a perspective view showing a mounting state of thesemiconductor light emitting device according to the first embodiment.

FIG. 11 is a right side view showing a mounting state of thesemiconductor light emitting device according to the first embodiment.

FIG. 12 is a rear view showing a modification of the semiconductor lightemitting device according to the first embodiment.

FIG. 13 is a right side view of the semiconductor light emitting deviceaccording to the modification in FIG. 12.

FIG. 14 is a rear view showing a modification of the semiconductor lightemitting device according to the first embodiment.

FIG. 15 is a right side view of the semiconductor light emitting deviceaccording to the modification in FIG. 14.

FIG. 16 is a perspective view of a semiconductor light emitting device,when viewed from the front upper right side, according to a secondembodiment of the present disclosure.

FIG. 17 is a front view of the semiconductor light emitting deviceaccording to the second embodiment.

FIG. 18 is a rear view of the semiconductor light emitting deviceaccording to the second embodiment.

FIG. 19 is a top view of the semiconductor light emitting deviceaccording to the second embodiment.

FIG. 20 is a bottom view of the semiconductor light emitting deviceaccording to the second embodiment.

FIG. 21 is a right side view of the semiconductor light emitting deviceaccording to the second embodiment.

FIG. 22 is a left side view of the semiconductor light emitting deviceaccording to the second embodiment.

FIG. 23 is a perspective view showing a mounted state of thesemiconductor light emitting device according to the second embodiment.

FIG. 24 is a right side view showing a mounting state of thesemiconductor light emitting device according to the second embodiment.

FIG. 25 is a perspective view of a semiconductor light emitting device,when viewed from the front upper right side, according to a thirdembodiment of the present disclosure.

FIG. 26 is a front view of the semiconductor light emitting deviceaccording to the third embodiment.

FIG. 27 is a perspective view of a semiconductor light emitting device,when viewed from the front upper right side, according to a fourthembodiment of the present disclosure.

FIG. 28 is a front view of the semiconductor light emitting deviceaccording to the fourth embodiment.

FIG. 29 is a cross-sectional view of the semiconductor light emittingdevice according to the fourth embodiment.

FIG. 30 is a perspective view of a semiconductor light emitting device,when viewed from a front upper right side, according to a fifthembodiment of the present disclosure.

FIG. 31 is a front view of the semiconductor light emitting deviceaccording to the fifth embodiment.

FIG. 32 is a perspective view of a semiconductor light emitting device,when viewed from a front upper right side, according to a sixthembodiment of the present disclosure.

FIG. 33 is a perspective view of the semiconductor light emittingdevice, when viewed from a rear upper left side, according to the sixthembodiment.

FIG. 34 is a front view of the semiconductor light emitting deviceaccording to the sixth embodiment.

FIG. 35 is a rear view of the semiconductor light emitting deviceaccording to the sixth embodiment.

FIG. 36 is a top view of the semiconductor light emitting deviceaccording to the sixth embodiment.

FIG. 37 is a bottom view of the semiconductor light emitting deviceaccording to the sixth embodiment.

FIG. 38 is a right side view of the semiconductor light emitting deviceaccording to the sixth embodiment.

FIG. 39 is a left side view of the semiconductor light emitting deviceaccording to the sixth embodiment.

FIG. 40 is a cross-sectional view taken along a line 40-40 in FIG. 34.

FIG. 41 is a rear view of a semiconductor light emitting deviceaccording to a modification of the sixth embodiment.

DETAILED DESCRIPTION

Embodiments of a semiconductor light emitting device will be nowdescribed with reference to the drawings. The following embodimentsexemplify a configuration and method for embodying the technical idea ofthe present disclosure, and do not limit a material, a shape, astructure, an arrangement, a dimension, and the like of each constituentpart of the present disclosure. Various modifications may be made to thefollowing embodiments.

In the present disclosure, “a state where a member A is connected to amember B” includes a case where the member A and the member B arephysically directly connected or even a case where the member A and themember B are indirectly connected through any other member that does notaffect an electrical connection state between the members A and B ordoes not impair functions and effects achieved by combinations of themembers A and B.

In the present disclosure, the terms “first,” “second,” “third,” and thelike are merely used as labels, and are not necessarily intended tosubject their objects to permutation.

First Embodiment

Hereinafter, a semiconductor light emitting device according to a firstembodiment of the present disclosure will be described with reference toFIGS. 1 to 11.

As shown in FIGS. 1 to 9, a semiconductor light emitting device A10includes a substrate 10, a main surface electrode 20, a back surfaceelectrode 30, a through electrode 40, a main surface insulating film 50,a back surface insulating film 60, a semiconductor light emittingelement 70, a wire 81, and a sealing resin 90. In FIGS. 1 and 5 to 8,the sealing resin is indicated by a two-dot chain line for convenienceof understanding. In FIG. 3, for convenience of understanding, thesealing resin is omitted, and the main surface insulating film 50 isindicated by a two-dot chain line.

The semiconductor light emitting device A10 is mounted on a circuitboard P10 shown in FIGS. 10 and 11. The semiconductor light emittingdevice A10 is a side view type semiconductor light emitting devicehaving an optical axis in a direction (the left direction in FIG. 11)parallel to an upper surface P11 of the circuit board P10 on which thesemiconductor light emitting device is mounted.

As shown in FIGS. 1, 2 and 3, a shape of the semiconductor lightemitting device A10 is rectangular as viewed from a thickness directionZ of the substrate of the semiconductor light emitting device A10. Here,for convenience of explanation, a long side direction of thesemiconductor light emitting device A10 perpendicular to the thicknessdirection Z of the substrate 10 of the semiconductor light emittingdevice A10 is defined as a first direction X, and a direction of a shortside direction of the semiconductor light emitting device A10perpendicular to both of the thickness direction Z and the firstdirection X is defined as a second direction Y.

The substrate 10 is a member for mounting the semiconductor lightemitting element 70 thereon and mounting the semiconductor lightemitting device A10 on the circuit board P10. The substrate 10 is madeof a material having electrical insulation. An example of the materialmay include glass epoxy resin.

The substrate 10 has a rectangular shape having its long side in thefirst direction X. The substrate 10 includes a main surface 11, a backsurface 12, a bottom surface 13, a top surface 14, a first side surface15, and a second side surface 16. The main surface 11 and the backsurface 12 face opposite sides to each other in the thickness directionZ. The bottom surface 13 and the top surface 14 face opposite sides inthe second direction Y. The first side surface 15 and the second sidesurface 16 face opposite sides in the first direction X.

As shown in FIG. 3, the main surface 11 includes a first side 111, asecond side 112, a third side 113, and a fourth side 114. The first side111 and the fourth side 114 are sides that extend along the firstdirection X and are separated from each other in the second direction Y.The second side 112 and the third side 113 are sides that extend alongthe second direction Y and are separated from each other in the firstdirection X. In the first direction X, the third side 113 is located ona side opposite to the second side. One end of the fourth side 114intersects the second side 112, and the other end of the fourth side 114intersects the third side 113.

As shown in FIGS. 3 and 4, the substrate 10 includes a first throughgroove 171 and a second through groove 172. As shown in FIG. 3, thefirst through groove 171 is a portion recessed from the first sidesurface 15 and the bottom surface 13. The first through groove 171 isconnected to the first side 111 and the second side 112 of the mainsurface 11. As shown in FIG. 8, the first through groove 171 reaches themain surface 11 and the back surface 12 of the substrate 10 in thethickness direction Z. A cross section of the first through groove 171perpendicular to the thickness direction Z has a quarter circular shape.A first through electrode 41 is disposed in the first through groove171.

As shown in FIG. 3, the second through groove 172 is a portion recessedfrom the second side surface 16 and the bottom surface 13. The secondthrough groove 172 is connected to the first side 111 and the third side113 of the main surface 11. As shown in FIG. 7, the second throughgroove 172 reaches the main surface 11 and the back surface 12 of thesubstrate 10 in the thickness direction Z. The cross section of thesecond through groove 172 perpendicular to the thickness direction Z hasa quarter circular shape. A second through electrode 42 is disposed inthe second through groove 172.

As shown in FIGS. 1 and 3, the main surface electrode 20 is disposed onthe main surface 11 of the substrate 10. The main surface electrode 20is a conductive member for electrically connecting the semiconductorlight emitting element 70 mounted on the main surface electrode 20 tothe circuit board P10 shown in FIGS. 10 and 11.

The main surface electrode 20 includes a first main surface electrode 21and a second main surface electrode 22. The first main surface electrode21 includes a first base portion 211, a die pad 212, and a connectionportion 213. The first base portion 211 is a portion in contact withboth of the first side 111 on the side of the bottom surface 13 of thesubstrate 10 and the second side 112 on the side of the first sidesurface 15 of the substrate 10 on the main surface 11 of the substrate10. In the present embodiment, the first base portion 211 has an annularshape with a central angle of 90 degrees (quarter annular shape). Theinner edge of the first base portion 211 intersects the first throughgroove 171 connected to the first side 111 and the second side 112 ofthe main surface 11.

The die pad 212 has a quadrangular shape. The semiconductor lightemitting element 70 is mounted on the die pad 212. The die pad 212 isconnected to the first base portion 211 via the connection portion 213.The connection portion 213 extends from the first base portion 211 in atransverse direction of the substrate 10, that is, in the seconddirection Y. The connection portion 213 is in contact with the fourthside 114 of the main surface 11 of the substrate 10. As shown in FIG. 5,the end surface 213a of the connection portion 213 is exposed from thesealing resin 90 on the top surface 14 side of the substrate 10.

The second main surface electrode 22 includes a second base part 221, awire pad 222, and a connection portion 223. The second base portion 221is a portion in contact with both of the first side 111 on the side ofthe bottom surface 13 of the substrate 10 and the third side 113 on theside of the second side surface 16 of the substrate 10 on the mainsurface 11 of the substrate 10. In the present embodiment, the secondbase portion 221 has an annular shape with a central angle of 90 degrees(quarter annular shape). The inner edge of the second base portion 221intersects the second through groove 172 connected to the first side 111and the third side 113 of the main surface 11.

The wire pad 222 has a quadrangular shape. The wire 81 connected to theelectrode of the semiconductor light emitting element 70 is connected tothe wire pad 222. In the present embodiment, the wire pad 222 is incontact with the fourth side 114 of the main surface 11 of the substrate10. As shown in FIG. 5, the end surface 222a of the wire pad 222 isexposed from the sealing resin 90 on the top surface 14 side of thesubstrate 10. The wire pad 222 is connected to the second base portion221 via the connection portion 223. The connection portion 223 extendsfrom the second base portion 221 in the transverse direction of thesubstrate 10, that is, in the second direction Y. The width of theconnection portion 223 in the first direction X is smaller than thewidth of the wire pad 222 in the first direction X.

As shown in FIGS. 2 and 4, the back surface electrode 30 is disposed onthe back surface 12 of the substrate 10. The back surface electrode 30includes a first back surface electrode 31 and a second back surfaceelectrode 32. The first back surface electrode 31 and the second backsurface electrode 32 are spaced apart in the first direction X. Thefirst back surface electrode 31 is disposed on the first side surface 15side of the substrate 10 on the back surface 12 of the substrate 10, andthe second back surface electrode 32 is disposed on the second sidesurface 16 side of the substrate 10 on the back surface 12 of thesubstrate 10.

As shown in FIG. 4, the first back surface electrode 31 is in contactwith the first side 121 and the second side 122 on the back surface 12of the substrate 10. A portion of the edge of the first back surfaceelectrode 31 intersects the first through groove 171. The second backsurface electrode 32 is in contact with the first side 121 and the thirdside 123 on the back surface 12 of the substrate 10. A portion of theedge of the second back surface electrode 32 intersects the secondthrough groove 172. The first back surface electrode 31 and the secondback surface electrode 32 extend to the fourth side 124 on the side ofthe top surface 14 of the substrate 10 on the back surface 12 of thesubstrate 10. As shown in FIGS. 3 and 4, the first through electrode 41is disposed along an inner wall of the first through groove 171. Asshown in FIG. 8, the first through electrode 41 extends to the mainsurface 11 of the substrate 10 and is in contact with the first mainsurface electrode 21 of the main surface 11. In addition, the firstthrough electrode 41 extends to the back surface 12 of the substrate 10and is in contact with the first back surface electrode 31 on the backsurface 12. Therefore, the first through electrode 41 electricallyconnects the first main surface electrode 21 and the first back surfaceelectrode 31.

As shown in FIGS. 3 and 4, the second through electrode 42 is disposedalong the inner wall of the second through groove 172. As shown in FIG.7, the second through electrode 42 extends to the main surface 11 of thesubstrate 10 and is in contact with the second main surface electrode 22of the main surface 11. In addition, the second through electrode 42extends to the back surface 12 of the substrate 10 and is in contactwith the second back surface electrode 32 on the back surface 12.Therefore, the second through electrode 42 electrically connects thesecond main surface electrode 22 and the second back surface electrode32.

As shown in FIG. 3, the main surface insulating film 50 is a member thatcovers a portion of the main surface electrode 20 on the main surface 11of the substrate 10. The main surface insulating film 50 includes afirst insulating film 51 that covers a portion of the first main surfaceelectrode 21, and a second insulating film 52 that covers a portion ofthe second main surface electrode 22. The main surface insulating film50 is made of an insulating resin material. The main surface insulatingfilm 50 is a resist layer and is referred to as a solder resist layer.The main surface insulating film 50 is formed on the main surface 11 ofthe substrate 10 by, for example, pressing, attaching, and curing afilm-like resist. The main surface insulating film 50 may be formedusing a liquid resist.

The first insulating film 51 covers the entire surface of the first baseportion 211 and a partial surface of the connection portion 213 of thefirst main surface electrode 21. Further, the first insulating film 51is in contact with the second side 112 of the main surface 11 of thesubstrate 10 and is also in contact with the first side 111 of the mainsurface 11 of the substrate 10. Accordingly, the first insulating film51 straddles the first main surface electrode 21 including the firstbase portion 211 in contact with the first side 111 and the second side112 of the main surface 11 of the substrate 10 such that both endportions 511 and 512 thereof are in contact with the main surface 11 ofthe substrate 10.

In addition, as shown in FIG. 8, the first insulating film 51 of thepresent embodiment has a resin portion 513 that enters the first throughgroove 171. The resin portion 513 covers a portion where the first baseportion 211 of the first main surface electrode 21 and the first throughelectrode 41 are connected.

As shown in FIG. 3, the second insulating film 52 covers the entiresurface of the second base portion 221 of the second main surfaceelectrode 22 and a partial surface of the connection portion 223.Further, the second insulating film 52 is in contact with the third side113 of the main surface 11 of the substrate 10 and is also in contactwith the first side 111 of the main surface 11 of the substrate 10.Accordingly, the second insulating film 52 straddles the second mainsurface electrode 22 including the second base portion 221 in contactwith the first side 111 and the third side 113 of the main surface 11 ofthe substrate 10, so that both end portions 521 and 522 thereof are incontact with the main surface 11 of the substrate 10.

In addition, as shown in FIG. 7, the second insulating film 52 of thepresent embodiment includes a resin portion 523 that enters the secondthrough groove 172. The resin portion 523 covers a portion where thesecond base portion 221 of the second main surface electrode 22 and thesecond through electrode 42 are connected.

The back surface insulating film 60 is disposed on the back surface 12of the substrate 10. The back surface insulating film 60 is made of aninsulating resin material. The back surface insulating film 60 is aresist layer. The back surface insulating film 60 functions as a markfor determining the connection direction of the semiconductor lightemitting device A10. The back surface insulating film 60 is in thevicinity of the center of the back surface 12 in the first direction X,and is interposed between the first back surface electrode 31 and thesecond back surface electrode 32. When viewed from the thicknessdirection Z, the back surface insulating film 60 has a convex shape inwhich the second back surface electrode 32 side protrudes in the firstdirection X. The back surface insulating film 60 having such a shapefunctions as a mark for determining the connection direction of thesemiconductor light emitting device A10. The back surface insulatingfilm 60 is formed by curing a film-like resist attached to the backsurface 12 of the substrate 10. The back surface insulating film 60 maybe formed using a liquid resist.

The semiconductor light emitting element 70 is, for example, a lightemitting diode (LED) element. The semiconductor light emitting element70 may be a light emitting element such as an LD. As shown in FIG. 3,the semiconductor light emitting element 70 has a substantiallyrectangular parallelepiped shape. The semiconductor light emittingelement 70 includes a main surface 71 and a back surface 72 that faceopposite sides in the thickness direction Z. The main surface 71 is asurface facing the same direction as the main surface 11 of thesubstrate 10, and the back surface 72 is a surface facing the die pad212. The semiconductor light emitting element 70 includes an electrodepad 711 on the main surface 71 and an electrode on the back surface 72.

As shown in FIG. 9, the semiconductor light emitting element 70 ismounted on the die pad 212 by a bonding member 85. The bonding member 85is made of a synthetic resin (so-called Ag paste) using, for example, anepoxy resin containing silver (Ag) and has conductivity. The electrodepad on the back surface 72 of the semiconductor light emitting element70 is electrically connected to the die pad 212 via the bonding member85. One end of the wire 81 is connected to the electrode pad 711 on themain surface 71 of the semiconductor light emitting element 70, and theother end of the wire 81 is connected to the wire pad 222.

As shown in FIG. 1, the sealing resin 90 covers the main surface 11 ofthe substrate 10, the semiconductor light emitting element 70, the mainsurface electrode 20, the main surface insulating film 50, and the wire81. The sealing resin 90 has a rectangular shape having a long side inthe first direction X as viewed from the thickness direction Z. Thesealing resin 90 includes a main surface 91 facing the thicknessdirection Z, a first side surface 95 and a second side surface 96 facingopposite sides in the first direction X, and a bottom surface 93 and atop surface 94 facing opposite sides in the second direction Y. In thepresent embodiment, the main surface 91 of the sealing resin 90 facesthe same direction as the main surface 11 of the substrate 10. Thebottom surface 93 of the sealing resin 90 is flush with the bottomsurface 13 of the substrate 10. The first side surface 95 of the sealingresin 90 is flush with the first side surface 15 of the substrate 10,and the second side surface 96 of the sealing resin 90 is flush with thesecond side surface 16 of the substrate 10. The top surface 94 of thesealing resin 90 is flush with the top surface 14 of the substrate 10.

The sealing resin 90 is made of a light-transmitting resin material.Examples of such a resin material may include transparent or translucentepoxy resin, silicone resin, acrylic resin, polyvinyl-based resin, andthe like. The sealing resin 90 may include a diffusing material thatdiffuses light from the semiconductor light emitting element 70, and afluorescent material that emits light having different wavelengths whenexcited by the light from the semiconductor light emitting element 70.

For example, the sealing resin 90 is formed by dicing the substrate 10.The substrate 10 is formed by dicing a mother substrate on which aplurality of main surface electrodes is formed. A frame is fixed to themain surface of the mother substrate, and the resin material is injectedinto the frame. After the resin material is cured, the substrate 10 andthe sealing resin 90 are obtained by dicing the resin material togetherwith the mother substrate.

As shown in FIG. 9, the main surface electrode 20 includes a first metallayer 201 that is in contact with the main surface 11 of the substrate10, and a second metal layer 202 that partially covers the first metallayer 201. The constituent material of the first metal layer 201 is, forexample, copper (Cu), and the constituent material of the second metallayer 202 is, for example, nickel (Ni) or palladium (Pd). The surface ofthe first metal layer 201 may be roughened, for example by etching. Thisroughening makes it easy to adhere the second metal layer 202, the firstinsulating film 51, and the second insulating film 52 to the surface ofthe first metal layer 201.

The back surface electrode 30 includes a first metal layer 301 that isin contact with the back surface 12 of the substrate 10, and a secondmetal layer 302 that covers the first metal layer 301. The constituentmaterials of the first metal layer 301 and the second metal layer 302are the same as those of the first metal layer 201 and the second metallayer 202 of the main surface electrode 20.

Here, an outline of a process of manufacturing the semiconductor lightemitting device A10 will be described. First, a base material capable offorming a plurality of substrates 10 is prepared. As the base material,a double-sided laminated substrate provided with a copper foil on bothsides thereof can be used. The copper foil on both surfaces of the basematerial is patterned by etching or the like to form the first metallayer 201 of the main surface electrode 20 and the first metal layer 301of the back surface electrode 30. A through hole is formed in the basematerial by, for example, a drill. This through hole becomes the firstthrough groove 171 and the second through groove 172 described above. Atthis time, the through hole penetrates the copper foil to be the mainsurface electrode 20 and the back surface electrode 30. For example, thethrough electrode 40 is formed on an inner surface of the through holeby electrolytic plating. Then, the main surface insulating film 50 isformed to cover the main surface electrode 20, and the back surfaceinsulating film 60 is formed between the back surface electrodes 30.

Next, the second metal layer 202 on the surface of the first metal layer201 of the main surface electrode 20 and the second metal layer 302 onthe surface of the first metal layer 301 of the back surface electrode30 are formed by, for example, electrolytic plating. The second metallayer 202 is formed on the surface of the first metal layer 201 that isnot covered with the main surface insulating film 50. Next, thesemiconductor light emitting element 70 is mounted on each main surfaceelectrode 20, and the wire 81 is connected. The sealing resin 90 isformed on the main surface of the base material.

Next, using a dicing blade or the like, the base material, the sealingresin, and the like are diced so as to divide the through holes. Thus,the diced semiconductor light emitting device A10 is obtained. Thesecond metal layer 202 is formed on the exposed end surface of the dicedsemiconductor light emitting device A10 by, for example, barrel plating.Therefore, as shown in FIG. 9, in the main surface electrode 20, thesecond metal layer 202 protrudes from the first side surface 15 and thesecond side surface 16 of the substrate 10 and the first side surface 95and the second side surface 96 of the sealing resin 90. Similarly, inthe back surface electrode 30, the second metal layer 302 protrudes fromthe first side surface 15 and the second side surface 16 of thesubstrate 10. Although not shown, a second metal layer that protrudesfrom the top surface 14 of the substrate 10 is also formed on theconnection portion 223 and the wire pad 222 of the main surfaceelectrode 20 shown in FIG. 3.

(Operation)

As shown in FIGS. 10 and 11, the semiconductor light emitting device A10is mounted on the circuit board P10. The circuit board P10 includes aland P12 for mounting on the top surface of the circuit board P10. Thesemiconductor light emitting device A10 is connected to the land P12 bya solder P20. At this time, as shown in FIGS. 3 and 4, the solder P20shown in FIGS. 10 and 11 enters the first through electrode 41 and thesecond through electrode 42 disposed in the first through groove 171 andthe second through groove 172 that are recessed in the substrate 10 ofthe semiconductor light emitting element 70, and the semiconductor lightemitting device A10 is mounted on the land P12 of the circuit board P10by the solder P20.

The semiconductor light emitting device A10 includes the main surfaceinsulating film 50 that covers the main surface electrode 20 disposed onthe main surface 11 of the substrate 10. As shown in FIGS. 1 and 3, themain surface insulating film 50 includes the first insulating film 51and the second insulating film 52 that cover the first base portion 211and the second base portion 221 in the first main surface electrode 21and the second main surface electrode 22.

The first insulating film 51 includes a portion that covers the firstmain surface electrode 21 between the first base portion 211 and the diepad 212 and whose both ends are in contact with the main surface 11 ofthe substrate 10. Accordingly, the solder P20 (see FIGS. 10 and 11)attached to the first through electrode 41 connected to the first baseportion 211 is unlikely to enter between the first base portion 211 andthe first insulating film 51. Therefore, since the solder P20 isprevented from penetrating into the semiconductor light emitting deviceA10 from between the first main surface electrode 21 and the firstinsulating film 51, an occurrence of a defect due to the semiconductorlight emitting element 70 separating from the die pad 212 is suppressed.

The second insulating film 52 includes a portion that covers the secondmain surface electrode 22 between the second base portion 221 and thewire pad 222 and whose both ends are in contact with the main surface 11of the substrate 10. Therefore, similar to the first insulating film 51,since the solder P20 is prevented from penetrating into thesemiconductor light emitting device A10 from between the second mainsurface electrode 22 and the second insulating film 52, an occurrence ofa defect due to the wire 81 separating from the wire pad 222 issuppressed.

Further, the semiconductor light emitting device A10 includes the backsurface electrode 30 on the back surface 12 of the substrate 10. Asshown in FIG. 11, since the solder P20 forms a fillet P21 on the backsurface electrode 30, the mounting of the semiconductor light emittingdevice A10 on the circuit board P10 can be confirmed by the fillet P21.Furthermore, the mounting strength with respect to the circuit board P10can be further increased by the fillet P21.

The sealing resin 90 covers the main surface 11 of the substrate 10, themain surface electrode 20, the main surface insulating film 50, thesemiconductor light emitting element 70, and the wire 81. The sealingresin 90 has good adhesion to the main surface insulating film 50.Accordingly, the sealing resin 90 is prevented from being peeled off ascompared with a case where the main surface insulating film 50 is notprovided.

As described above, according to the present embodiment, the followingeffects can be obtained.

(1) The semiconductor light emitting device A10 includes the mainsurface insulating film 50 that covers the main surface electrode 20disposed on the main surface 11 of the substrate 10. The main surfaceinsulating film 50 includes the first insulating film 51 and the secondinsulating film 52 that cover the first base portion 211 and the secondbase portion 221 in the first main surface electrode 21 and the secondmain surface electrode 22. The first insulating film 51 has a portionthat covers the first main surface electrode 21 between the first baseportion 211 and the die pad 212 and whose both ends are in contact withthe main surface 11 of the substrate 10. Accordingly, the solder P20attached to the first through electrode 41 connected to the first baseportion 211 is unlikely to enter between the first base portion 211 andthe first insulating film 51. Therefore, since the solder P20 isprevented from penetrating into the semiconductor light emitting deviceA10 from between the first main surface electrode 21 and the firstinsulating film 51, an occurrence of a defect due to the semiconductorlight emitting element 70 separating from the die pad 212 is suppressed.

(2) The second insulating film 52 has a portion that covers the secondmain surface electrode 22 between the second base portion 221 and thewire pad 222 and whose both ends are in contact with the main surface 11of the substrate 10. Therefore, similar to the first insulating film 51,since the solder P20 is prevented from penetrating into thesemiconductor light emitting device A10 from between the second mainsurface electrode 22 and the second insulating film 52, an occurrence ofa defect due to the wire 81 separating from the wire pad 222 issuppressed.

(3) The sealing resin 90 covers the main surface 11 of substrate 10, themain surface electrode 20, the main surface insulating film 50, thesemiconductor light emitting element 70, and the wire 81. The sealingresin 90 has good adhesion to the main surface insulating film 50.Therefore, the sealing resin 90 is prevented from being peeled off ascompared with a case where the main surface insulating film 50 is notprovided.

(Modification of First Embodiment)

As shown in FIGS. 12 and 13, in a semiconductor light emitting deviceA11, a height of the first back surface electrode 31 and the second backsurface electrode 32 constituting the back surface electrode 30 in thesecond direction Y is about ¾ of a height of the substrate 10 in thesecond direction Y. Such semiconductor light emitting device A11 canalso be mounted with sufficient strength on the circuit board P10 shownin FIGS. 10 and 11.

As shown in FIGS. 14 and 15, in a semiconductor light emitting deviceA12, a height of the first back surface electrode 31 and the second backsurface electrode 32 in the second direction Y is about ½ of the heightof the substrate 10 in the second direction Y. Such semiconductor lightemitting device A12 can also be mounted with sufficient strength on thecircuit board P10 shown in FIGS. 10 and 11.

As shown in FIGS. 12 to 15, when the height of the first back surfaceelectrode 31 and the second back surface electrode 32 are reduced, anamount of solder P20 (see FIGS. 10 and 11) adhering thereto is decreasedand the fillet P21 can be reduced. Even in such a small fillet P21, themounting of the semiconductor light emitting devices A11 and A12 on thecircuit board P10 can be confirmed. Further, by reducing the fillet P21,the semiconductor light emitting devices A11 and A12 can be mounted withthe land P12 (see FIG. 11) having a smaller area.

Second Embodiment

Hereinafter, a semiconductor light emitting device according to a secondembodiment of the present disclosure will be described with reference toFIGS. 16 to 24. In this embodiment, the same constituent members as theaforementioned embodiment are denoted by the same reference numerals orsymbols, and explanation thereof will not be repeated.

In FIGS. 16 and 19, a sealing resin is indicated by a two-dot chain linefor convenience of understanding. In FIG. 17, for convenience ofunderstanding, the sealing resin is omitted, and a main surfaceinsulating film is indicated by a two-dot chain line.

A semiconductor light emitting device A20 according to this embodimentis different from that of the first embodiment in terms of the shapes ofthe main surface electrode 20 and the main surface insulating film 50.As shown in FIG. 17, the main surface electrode 20 includes a first mainsurface electrode 21 and a second main surface electrode 22.

The first main surface electrode 21 includes a first base portion 211, adie pad 212, and a connection portion 213. The first base portion 211 ofthis embodiment includes a fan shape with a central angle of 90 degrees(quarter circular shape). That is, the first base portion 211 of thisembodiment has a corner portion 211 a that protrudes into the firstthrough groove 171.

The second main surface electrode 22 includes a second base portion 221,a wire pad 222, and a connection portion 223. The second base portion221 of this embodiment has a fan shape with a central angle of 90degrees (quarter circular shape). That is, the second base portion 221of this present embodiment includes a corner portion 221 a thatprotrudes into the second through groove 172.

The main surface insulating film 50 includes a first insulating film 51and a second insulating film 52. The first insulating film 51 covers thesurface of the first base portion 211 and the surface of the connectionportion 213. Further, the first insulating film 51 is in contact withthe main surface 11 so as to be in contact with the first side 111 andthe second side 112 on the main surface 11 of the substrate 10. Then,the first insulating film 51 of this embodiment covers the cornerportion 211 a of the first base portion 211 and does not enter the firstthrough groove 171. Therefore, in this embodiment, the entire innersurface of the first through electrode 41 is exposed.

The second insulating film 52 covers the surface of the second baseportion 221 and the surface of the connection portion 223. Further, thesecond insulating film 52 is in contact with the main surface 11 so asto be in contact with the first side 111 and the third side 113 on themain surface 11 of the substrate 10. Then, the second insulating film 52of this embodiment covers the corner portion 221 a of the second baseportion 221 and does not enter the second through groove 172. Therefore,in this embodiment, the entire inner surface of the second throughelectrode 42 is exposed.

FIGS. 23 and 24 show a mounting state of the semiconductor lightemitting device A20 according to the present embodiment. In thesemiconductor light emitting device A20, the solder P20 is adhered tothe entire wall surface of the second through electrode 42 penetratingthe substrate 10 in the thickness direction Z of the substrate 10 on thesecond side surface 16 of the substrate 10. Then, the solder P20 isadhered to the second base portion 221 of the second main surfaceelectrode 22 connected to the second through electrode 42, and thesecond back surface electrode 32 connected to the second throughelectrode 42. Although not shown, the same applies to the first sidesurface 15 side of the substrate 10. Therefore, the adhesion amount ofthe solder P20 on the side of the main surface 11 of the substrate 10 isincreased, and the semiconductor light emitting device A20 can be stablyfixed. Then, without using a jig or the like for fixing thesemiconductor light emitting device A20, the semiconductor lightemitting device A20 can be mounted on the circuit board P10 so that theoptical axis is parallel to the circuit board P10.

Even in the semiconductor light emitting device A20 according to thisembodiment, it is possible to suppress an occurrence of defects due topenetration of solder, as in the aforementioned embodiment.

Third Embodiment

Hereinafter, a semiconductor light emitting device according to a thirdembodiment of the present disclosure will be described with reference toFIGS. 25 and 26.

In this embodiment, the same constituent members as the aforementionedembodiments are denoted by the same reference numerals or symbols, andexplanation thereof will not be repeated. In FIG. 25, a sealing resin isindicated by a two-dot chain line for convenience of understanding. InFIG. 26, the sealing resin is omitted for convenience of understanding.

A semiconductor light emitting device A30 according to this embodimentis different from that of the second embodiment in terms of the shape ofthe main surface insulating film 50. As shown in FIGS. 25 and 26, themain surface insulating film 50 includes a first insulating film 51 anda second insulating film 52.

The first insulating film 51 covers the surface of the first baseportion 211 and the surface of the connection portion 213. Further, thefirst insulating film 51 is not in contact with the first side 111 andthe second side 112 on the main surface 11 of the substrate 10, but isin contact with the main surface 11. The second insulating film 52covers the surface of only the connection part 223. In addition, thesecond insulating film 52 is not in contact with the first side 111 andthe third side 113 on the main surface 11 of the substrate 10, but is incontact with the main surface 11.

In this embodiment, it is possible to reduce the amount of resin used toform the main surface insulating film 50 while suppressing theoccurrence of defects.

Fourth Embodiment

Hereinafter, a semiconductor light emitting device according to a fourthembodiment of the present disclosure will be described with reference toFIGS. 27 to 29.

In this embodiment, the same constituent members as the aforementionedembodiments are denoted by the same reference numerals or symbols, andexplanation thereof will not be repeated. In FIG. 27, a sealing resin isindicated by a two-dot chain line for convenience of understanding. InFIG. 28, for convenience of understanding, the sealing resin is omitted,and a main surface insulating film is indicated by a two-dot chain line.

As shown in FIGS. 27 and 28, a semiconductor light emitting device A40according to this embodiment is different from the third embodiment interms of the semiconductor light emitting element 70, the main surfaceelectrode 20, the main surface insulating film 50, and the wires 81 and82.

The main surface electrode 20 includes a first main surface electrode 21and a second main surface electrode 22. The first main surface electrode21 of this embodiment includes a first base portion 211, a die pad 212,a wire pad 214, and a connection portion 213. The wire pad 214 is formedon the side of the top surface 14 of the substrate 10 with respect tothe connection portion 213. In this embodiment, the wire pad 222 is incontact with the fourth side 114 of the main surface 11.

The semiconductor light emitting element 70 of this embodiment includestwo electrode pads 711 and 712 on the main surface. One end of the wire82 is connected to the electrode pad 712, and the other end of the wire82 is connected to the wire pad 214 of the first main surface electrode21. One end of the wire 81 is connected to the electrode pad 711, andthe other end of the wire 81 is connected to the wire pad 222 of thesecond main surface electrode 22.

As shown in FIG. 29, the semiconductor light emitting element 70 ismounted on the die pad 212 by a bonding member 85. In this embodiment, amaterial mainly selected for heat dissipation may also be used as thebonding member 85.

The main surface insulating film 50 includes a first insulating film 51and a second insulating film 52. The first insulating film 51 of thisembodiment covers an area between the die pad 212 and the first baseportion 211, and both end portions 511 and 512 thereof are in contactwith the main surface 11 of the substrate 10 across the first mainsurface electrode 21.

Even in the semiconductor light emitting device A40 of this embodiment,it is possible to suppress an occurrence of defects due to penetrationof solder as in the aforementioned embodiments.

Fifth Embodiment

Hereinafter, a semiconductor light emitting device of a fifth embodimentof the present disclosure will be described with reference to FIGS. 30and 31.

In this embodiment, the same constituent members as the aforementionedembodiments are denoted by the same reference numerals or symbols, andexplanation thereof will not be repeated. In FIG. 30, a sealing resin isindicated by a two-dot chain line for convenience of understanding. InFIG. 31, the sealing resin is omitted for convenience of understanding.

A semiconductor light emitting device A50 according to this embodimentis different from the first embodiment in terms of the shape of the mainsurface electrode 20. As shown in FIGS. 30 and 31, the main surfaceelectrode 20 of this embodiment includes a first main surface electrode21 and a second main surface electrode 22. The first main surfaceelectrode 21 and the second main surface electrode 22 are not in contactwith the fourth side 114 (the upper side in FIG. 31) of the main surface11 of the substrate 10. Specifically, the connection portion 213 of thefirst main surface electrode 21 extends from the first base portion 211in the transverse direction of the substrate 10, that is, in the seconddirection Y. In this embodiment, the upper end of the connection portion213 in the second direction Y is located at the same position as theupper end of the die pad 212 and is not in contact with the fourth side114 of the main surface 11 of the substrate 10.

In the wire pad 222 of the second main surface electrode 22, the upperend of the wire pad 222 in the second direction Y is slightly above theupper end of the die pad 212 and is not in contact with the fourth side114 of the main surface 11 of the substrate 10.

Even in the semiconductor light emitting device A50 of this embodiment,it is possible to suppress an occurrence of defects due to penetrationof solder as in the aforementioned embodiments.

Sixth Embodiment

Hereinafter, a semiconductor light emitting device of a sixth embodimentof the present disclosure will be described with reference to FIGS. 32to 40.

In this embodiment, the same constituent members as the aforementionedembodiments are denoted by the same reference numerals or symbols, andexplanation thereof will not be repeated. As shown in FIGS. 32 to 39, asemiconductor light emitting device A60 includes a substrate 10, a mainsurface electrode 20, a back surface electrode 30, a through electrode40, a main surface insulating film 50, a back surface insulating film60, a semiconductor light emitting element 70, a wire 81, and a sealingresin 90. In FIGS. 32 and 36 to 39, the sealing resin is indicated by atwo-dot chain line for convenience of understanding. In FIG. 34, forconvenience of understanding, the sealing resin is omitted and the mainsurface insulating film is indicated by a two-dot chain line.

As shown in FIGS. 32 and 34, the shape of the semiconductor lightemitting device A60 is rectangular as viewed from the thicknessdirection Z of the substrate 10 of the semiconductor light emittingdevice A60. As shown in FIGS. 34 and 35, the substrate 10 includes afirst through groove 171, a second through groove 172, a third throughgroove 173 and a fourth through groove 174.

As shown in FIG. 34, the first through groove 171 is a portion recessedfrom the first side surface 15 and the bottom surface 13. The firstthrough groove 171 is connected to the first side 111 and the secondside 112 of the main surface 11. As shown in FIG. 36, the first throughgroove 171 reaches the main surface 11 and the back surface 12 of thesubstrate 10 in the thickness direction Z. The cross section of thefirst through groove 171 perpendicular to the thickness direction Z hasa quarter circular shape. A first through electrode 41 is disposed inthe first through groove 171.

As shown in FIG. 34, the second through groove 172 is a portion recessedfrom the second side surface 16 and the bottom surface 13. The secondthrough groove 172 is connected to the first side 111 and the third side113 of the main surface 11. As shown in FIG. 36, the second throughgroove 172 reaches the main surface 11 and the back surface 12 of thesubstrate 10 in the thickness direction Z. The cross section of thesecond through groove 172 perpendicular to the thickness direction Z hasa quarter circular shape. A second through electrode 42 is disposed inthe second through groove 172.

As shown in FIG. 34, the third through groove 173 is a portion recessedfrom the first side surface 15 and the top surface 14. The third throughgroove 173 is connected to the fourth side 114 and the second side 112of the main surface 11. As shown in FIG. 37, the third through groove173 reaches the main surface 11 and the back surface 12 of the substrate10 in the thickness direction Z. The cross section of the third throughgroove 173 perpendicular to the thickness direction Z has a quartercircular shape. A third through electrode 43 is disposed in the thirdthrough groove 173.

As shown in FIG. 34, the fourth through groove 174 is a portion recessedfrom the second side surface 16 and the top surface 14. The fourththrough groove 174 is connected to the fourth side 114 and the thirdside 113 of the main surface 11. As shown in FIG. 37, the fourth throughgroove 174 reaches the main surface 11 and the back surface 12 of thesubstrate 10 in the thickness direction Z. The cross section of thefourth through groove 174 perpendicular to the thickness direction Z hasa quarter circular shape. A fourth through electrode 44 is disposed inthe fourth through groove 174.

As shown in FIG. 34, the main surface electrode 20 includes a first mainsurface electrode 21 and a second main surface electrode 22. The firstmain surface electrode 21 includes a first base portion 211 and a diepad 212.

The first base portion 211 is a portion in contact with the first side111 on the side of the bottom surface 13 of the substrate 10, the secondside 112 on the first side surface 15 side of the substrate 10, and thefourth side 114 on the side of the top surface 14 of the substrate 10.In this embodiment, the first base portion 211 includes two notcheshaving a circular shape with a central angle of 90 degrees (quartercircular shape). The inner edge of each of the notches intersects thefirst through groove 171 connected to the first side 111 and the secondside 112 of the main surface 11 and the third through groove 173connected to the second side 112 and the fourth side 114 of the mainsurface 11. The first base portion 211 of this embodiment corresponds toa U-shaped portion in contact with the first side 111, the second side112, and the fourth side 114 of the main surface 11 of the substrate 10.

The second main surface electrode 22 includes a second base portion 221and a wire pad 222. The second base portion 221 is a portion in contactwith the first side 111 on the side of the bottom surface 13 of thesubstrate 10, the third side 113 on the side of the second side surface16 of the substrate 10, and the fourth side 114 on the side of the topsurface 14 of the substrate 10. In this embodiment, the second baseportion 221 includes two notches having a circular shape with a centralangle of 90 degrees (quarter circular shape). The inner edge of each ofthe notches intersects the second through groove 172 connected to thefirst side 111 and the third side 113 of the main surface 11 and thefourth through groove 174 connected to the third side 113 and the fourthside 114 of the main surface 11. The second base portion 221 of thisembodiment corresponds to a U-shaped portion in contact with the firstside 111, the third side 112, and the fourth side 114 of the mainsurface 11 of the substrate 10.

The wire pad 222 is interposed between a portion in contact with thefirst side 111 and a portion in contact with the fourth side 114 in thesecond base portion 221. The semiconductor light emitting element 70 is,for example, a light emitting diode (LED) element. The semiconductorlight emitting element 70 may be a light emitting element such as an LD.As shown in FIG. 34, the semiconductor light emitting element 70 has asquare shape as viewed from the thickness direction Z.

As shown in FIGS. 33 and 35, the back surface electrode 30 includes afirst back surface electrode 31 and a second back surface electrode 32.As shown in FIG. 35, the first back surface electrode 31 is in contactwith the first side 121, the second side 122, and the fourth side 124 onthe back surface 12 of the substrate 10. A portion of the edge of thefirst back surface electrode 31 intersects the first through groove 171and the third through groove 173. The second back surface electrode 32is in contact with the first side 121, the third side 123, and thefourth side 124 on the back surface 12 of the substrate 10. A portion ofthe edge of the second back surface electrode 32 intersects the secondthrough groove 172 and the fourth through groove 174.

As shown in FIGS. 34 and 35, the first through electrode 41 is disposedalong the inner wall of the first through groove 171. The second throughelectrode 42 is disposed along the inner wall of the second throughgroove 172. The third through electrode 43 is disposed along an innerwall of the third through groove 173. The fourth through electrode 44 isdisposed along the inner wall of an fourth through groove 174.

As shown in FIG. 37, the first through electrode 41 extends to the mainsurface 11 of the substrate 10 and is in contact with the first mainsurface electrode 21 of the main surface 11. In addition, the firstthrough electrode 41 extends to the back surface 12 of the substrate 10and is in contact with the first back surface electrode 31 of the backsurface 12. The second through electrode 42 extends to the main surface11 of the substrate 10 and is in contact with the second main surfaceelectrode 22 of the main surface 11. Further, the second throughelectrode 42 extends to the back surface 12 of the substrate 10 and isin contact with the second back surface electrode 32 of the back surface12.

As shown in FIG. 36, the third through electrode 43 extends to the mainsurface 11 of the substrate 10 and is in contact with the first mainsurface electrode 21 of the main surface 11. In addition, the thirdthrough electrode 43 extends to the back surface 12 of the substrate 10and is in contact with the first back surface electrode 31 of the backsurface 12. The fourth through electrode 44 extends to the main surface11 of the substrate 10 and is in contact with the second main surfaceelectrode 22 of the main surface 11. Further, the fourth throughelectrode 44 extends to the back surface 12 of the substrate 10 and isin contact with the second back surface electrode 32 of the back surface12.

As shown in FIG. 34, the main surface insulating film 50 includes afirst insulating film 51 covering a portion of the first main surfaceelectrode 21, and a second insulating film 52 covering a portion of thesecond main surface electrode 22. The first insulating film 51 coversthe entire surface of the first base portion 211 of the first mainsurface electrode 21 and is in contact with the first side 111 and thefourth side 114 across the first main surface electrode 21. In addition,as shown in FIG. 39, the first insulating film 51 of this embodimentincludes a resin portion 513 that enters the first through groove 171and a resin portion 514 that enters the third through groove 173.

The second insulating film 52 covers the entire surface of the secondbase portion 221 of the second main surface electrode 22 and is incontact with the first side 111 and the fourth side 114 across thesecond main surface electrode 22. In addition, as shown in FIG. 38, thesecond insulating film 52 of this embodiment includes a resin portion523 that enters the second through groove 172 and a resin portion 524that enters the fourth through groove 174.

In the semiconductor light emitting device A60 of this embodiment, thefirst main surface electrode 21 and the second main surface electrode 22are covered with the first insulating film 51 and the second insulatingfilm 52. Therefore, as in the aforementioned embodiments, the solder P20used for mounting is prevented from penetrating into the semiconductorlight emitting device A60, thereby suppressing an occurrence of defects.

In addition, the semiconductor light emitting device A60 of thisembodiment may be mounted with the bottom surface 13 shown in FIG. 34facing the circuit board P10, that is, on the circuit board P10 usingthe first through electrode 41 and the second through electrode 42.Further, the semiconductor light emitting device A60 of this embodimentmay be mounted with the top surface 14 shown in FIG. 34 facing thecircuit board P10, that is, on the circuit board P10 using the thirdthrough electrode 43 and the fourth through electrode 44. Therefore, thecircuit board has an increased degree of freedom in the arrangement ofpads with respect to the direction of light emitted from the mountedsemiconductor light emitting device A60, that is, an increased degree offreedom for designing the circuit board.

(Modification of Sixth Embodiment)

As shown in FIG. 41, a semiconductor light emitting device A61 includesa first back surface electrode 31, a second back surface electrode 32, athird back surface electrode 33, and a fourth back surface electrode 34corresponding to the first through electrode 41, the second throughelectrode 42, the third through electrode 43, and the fourth throughelectrode 44, respectively. In this way, by reducing the height of thefirst back surface electrode 31 to the fourth back surface electrode 34,the fillet P21 formed by the solder P20 when the semiconductor lightemitting device A61 is mounted on the circuit board P10 by the solderP20 is reduced, and accordingly, the semiconductor light emitting deviceA61 can be stably mounted on the circuit board P10 without suppressingthe semiconductor light emitting device A61.

(Other Modifications)

A semiconductor light emitting device including a plurality ofsemiconductor light emitting elements mounted thereon may be used forthe aforementioned embodiments and modifications.

A back surface electrode may be omitted for the aforementionedembodiments and modifications.

A back surface insulating film may be omitted for the aforementionedembodiments and modifications.

The aforementioned embodiments and modifications may be suitablycombined.

The semiconductor light emitting device according to the presentdisclosure is not limited to the aforementioned embodiments andmodifications. The specific configuration of each part of thesemiconductor light emitting device according to the present disclosurecan be varied in design in various ways.

According to the present disclosure in some embodiments, it is possibleto provide a semiconductor light emitting device capable of suppressingan occurrence of defects due to solder penetration.

While certain embodiments have been described, these embodiments havebeen presented by way of example only, and are not intended to limit thescope of the disclosures. Indeed, the embodiments described herein maybe embodied in a variety of other forms. Furthermore, various omissions,substitutions and changes in the form of the embodiments describedherein may be made without departing from the spirit of the disclosures.The accompanying claims and their equivalents are intended to cover suchforms or modifications as would fall within the scope and spirit of thedisclosures.

1-22. (canceled)
 23. A semiconductor light emitting device comprising: asubstrate including: a first surface and a second surface facingopposite sides in a thickness direction of the substrate, a first sidesurface and a second side surface facing opposite sides in a firstdirection perpendicular to the thickness direction, a third side surfaceand a fourth side surface facing opposite sides in a second directionperpendicular to the thickness direction and the first direction, afirst recessed portion connecting the first side surface and the thirdside surface and recessed when seen in the thickness direction, and asecond recessed portion connecting the second side surface and the thirdside surface and recessed when seen in the thickness direction; a firstelectrode disposed on the first surface, the first recessed portion, andthe second surface; a second electrode disposed on the first surface,the second recessed portion, and the second surface, and being separatefrom the first electrode; a light emitting element disposed on the firstelectrode; a wire connecting the light emitting element and the secondelectrode; a light-transmitting resin covering the light emittingelement and the wire; a first covering member disposed from a portion ofthe first electrode disposed on the first surface of the substrate tothe first surface of the substrate; and a second covering memberdisposed from a portion of the second electrode disposed on the firstsurface of the substrate to the first surface of the substrate.
 24. Thesemiconductor light emitting device of claim 23, wherein the firstcovering member overlaps at least a part of the first recessed portionwhen seen in the first direction.
 25. The semiconductor light emittingdevice of claim 23, wherein the second covering member overlaps at leasta part of the second recessed portion when seen in the first direction.26. The semiconductor light emitting device of claim 23, wherein thefirst covering member overlaps at least a part of the first recessedportion when seen in the second direction.
 27. The semiconductor lightemitting device of claim 23, wherein the second covering member overlapsat least a part of the second recessed portion when seen in the seconddirection.
 28. The semiconductor light emitting device of claim 23,wherein a portion of the wire connected to the second electrode ispositioned to be closer to the fourth side surface than the third sidesurface.
 29. The semiconductor light emitting device of claim 23,wherein a portion of the first electrode formed on the second surfaceand a portion of the second electrode formed on the second surface arenon-rectangular when seen in the thickness direction.
 30. Thesemiconductor light emitting device of claim 23, wherein thelight-transmitting resin and the first covering member include endsurfaces that are flush with the first side surface.
 31. Thesemiconductor light emitting device of claim 23, wherein thelight-transmitting resin and the second covering member include endsurfaces that are flush with the second side surface.
 32. Thesemiconductor light emitting device of claim 23, wherein thelight-transmitting resin, the first covering member, and the secondcovering member include end surfaces that are flush with the third sidesurface.
 34. The semiconductor light emitting device of claim 23,wherein the first electrode is exposed from the light-transmitting resinin a direction that the fourth side surface faces.
 35. The semiconductorlight emitting device of claim 23, wherein the second electrode isexposed from the light-transmitting resin in a direction that the fourthside surface faces.